PartNumber | SIE832DF-T1-E3 | SIE830DF-T1-E3 | SIE830DF-T1-GE3 |
Description | MOSFET RECOMMENDED ALT 781-SIE818DF-GE3 | RF Bipolar Transistors MOSFET 30V 50A 104W | RF Bipolar Transistors MOSFET 30V 120A 104W 4.2mohm @ 10V |
Manufacturer | Vishay | Vishay / Siliconix | Vishay / Siliconix |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
RoHS | E | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PolarPAK-10 | - | - |
Tradename | TrenchFET, PolarPAK | - | - |
Packaging | Reel | Reel | Reel |
Height | 0.8 mm | - | - |
Length | 6.15 mm | - | - |
Series | SIE | - | - |
Width | 5.16 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | SIE832DF-E3 | - | - |
Part Aliases | - | SIE830DF-E3 | SIE830DF-GE3 |
Package Case | - | PolarPAK-10 | PolarPAK-10 |
Number of Channels | - | 1 Channel | 1 Channel |
Configuration | - | Single | Single |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Pd Power Dissipation | - | 5.2 W | 5.2 W |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Fall Time | - | 95 ns | - |
Rise Time | - | 105 ns | - |
Vgs Gate Source Voltage | - | 12 V | 12 V |
Id Continuous Drain Current | - | 27 A | 27 A |
Vds Drain Source Breakdown Voltage | - | 30 V | 30 V |
Rds On Drain Source Resistance | - | 4.2 mOhms | 4.2 mOhms |
Transistor Polarity | - | N-Channel | N-Channel |
Typical Turn Off Delay Time | - | 70 ns | - |
Typical Turn On Delay Time | - | 35 ns | - |
Channel Mode | - | Enhancement | - |