| PartNumber | SIHA15N65E-GE3 | SIHA15N60E-E3 | SIHA15N50E-E3 |
| Description | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220FP-3 | TO-220FP-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 550 V |
| Id Continuous Drain Current | 15 A | 15 A | 14.5 A |
| Rds On Drain Source Resistance | 280 mOhms | 280 mOhms | 243 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 4 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 96 nC | 38 nC | 33 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 34 W | 34 W | 33 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Series | E | E | E |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 5.6 S | - | - |
| Fall Time | 25 ns | 33 ns | 18 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 24 ns | 51 ns | 24 ns |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 48 ns | 35 ns | 34 ns |
| Typical Turn On Delay Time | 18 ns | 17 ns | 15 ns |
| Packaging | - | Tube | Tube |
| Height | - | 15.49 mm | - |
| Length | - | 10.41 mm | - |
| Width | - | 4.7 mm | - |
| Factory Pack Quantity | - | 50 | 50 |
| Unit Weight | - | 0.211644 oz | 0.211644 oz |