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| PartNumber | SIHLL110TR-GE3 | SIHLL110T-E3 | SIHLL110TRGE3 |
| Description | MOSFET 100V Vds 20V Vgs SOT-223 | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 1.5 A | - | - |
| Rds On Drain Source Resistance | 540 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 6.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 0.57 S | - | - |
| Fall Time | 18 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 47 ns | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns | - | - |
| Typical Turn On Delay Time | 9.3 ns | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHLL110TR-GE3 | MOSFET 100V Vds 20V Vgs SOT-223 | |
| SIHLL110T-E3 | Neu und Original | ||
| SIHLL110TRGE3 | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA |