 |  | | |
| PartNumber | SIHS36N50D-E3 | SIHS36N50D | SIHS36N50DE3 |
| Description | MOSFET 500V Vds 30V Vgs Super-247 | Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 36 A | - | - |
| Rds On Drain Source Resistance | 130 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 83 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 446 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 20.82 mm | - | - |
| Length | 15.87 mm | - | - |
| Series | D | - | - |
| Width | 5.31 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 68 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 89 ns | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 79 ns | - | - |
| Typical Turn On Delay Time | 33 ns | - | - |
| Part # Aliases | SIHS36N50D | - | - |
| Unit Weight | 1.340411 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHS36N50D-E3 | MOSFET 500V Vds 30V Vgs Super-247 | |
Vishay |
SIHS36N50D-E3 | RF Bipolar Transistors MOSFET 500V 130mOhm@10V 36A N-Ch D-SRS | |
| SIHS36N50D | Neu und Original | ||
| SIHS36N50DE3 | Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA |