SIR18

SIR184DP-T1-RE3 vs SIR182DP-T1-RE3 vs SiR180DP-T1-RE3

 
PartNumberSIR184DP-T1-RE3SIR182DP-T1-RE3SiR180DP-T1-RE3
DescriptionMOSFET 60V Vds 20V Vgs PowerPAK SO-8MOSFET 60V Vds 20V Vgs PowerPAK SO-8MOSFET 60V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8PowerPAK-SO-8PowerPAK-SO-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current73 A60 A60 A
Rds On Drain Source Resistance4.7 mOhms2.3 mOhms2.05 mOhms
Vgs th Gate Source Threshold Voltage2 V3.6 V2 V
Vgs Gate Source Voltage10 V20 V20 V
Qg Gate Charge21 nC42.2 nC87 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation62.5 W69.4 W83.3 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReelReel
SeriesSIRSIRSIR
Transistor Type1 N-Channel--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time6 ns10 ns7 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time6 ns23 ns8 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time20 ns21 ns31 ns
Typical Turn On Delay Time11 ns15 ns17 ns
Forward Transconductance Min--35 S
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR184DP-T1-RE3 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
SIR182DP-T1-RE3 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
SiR180DP-T1-RE3 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
SIR186DP-T1-RE3 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
SIR188DP-T1-RE3 MOSFET 60V Vds 20V Vgs PowerPAK SO-8
Vishay
Vishay
SIR188DP-T1-RE3 MOSFET N-CHAN 60V
SIR182DP-T1-RE3 MOSFET N-CH 60V 60A POWERPAKSO-8
SIR180DP-T1-RE3 MOSFET N-CHAN 60V POWERPAK SO-8
SIR184DP-T1-RE3 MOSFET N-CHAN 60V POWERPAK SO-8
SIR186DP-T1-RE3 N-Channel 60 V (D-S) MOSFET
SIR182DP Neu und Original
Top