 | | | |
| PartNumber | SIR403EDP-T1-GE3 | SIR401DP-T1-GE3 | SIR402DP-T1-GE3 |
| Description | MOSFET -30V Vds 25V Vgs PowerPAK SO-8 | MOSFET -20V Vds 12V Vgs PowerPAK SO-8 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | E | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIR | SIR | SIR |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 50 A | - |
| Rds On Drain Source Resistance | - | 2.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1.5 V | - |
| Vgs Gate Source Voltage | - | 12 V | - |
| Qg Gate Charge | - | 310 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 39 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 P-Channel | - |
| Forward Transconductance Min | - | 77 S | - |
| Fall Time | - | 41 ns | - |
| Rise Time | - | 13 ns | - |
| Typical Turn Off Delay Time | - | 175 ns | - |
| Typical Turn On Delay Time | - | 14 ns | - |
| Part # Aliases | - | SIR401DP-GE3 | SIR402DP-GE3 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIR403EDP-T1-GE3 | MOSFET -30V Vds 25V Vgs PowerPAK SO-8 | |
| SIR404DP-T1-GE3 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | ||
| SIR401DP-T1-GE3 | MOSFET -20V Vds 12V Vgs PowerPAK SO-8 | ||
| SIR402DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
Vishay |
SIR408DP-T1-GE3 | IGBT Transistors MOSFET 25 Volts 21.5 Amps 4.8 Watts | |
| SIR404DP-T1-GE3 | RF Bipolar Transistors MOSFET 20V 60A 104W 1.6mohm @ 10V | ||
| SIR406DP-T1-GE3 | RF Bipolar Transistors MOSFET 25V 40A 48W 3.8mohm @ 10V | ||
| SIR401DP-T1-GE3 | MOSFET P-CH 20V 50A PPAK SO-8 | ||
| SIR402DP-T1-GE3 | MOSFET N-CH 30V 35A PPAK SO-8 | ||
| SIR403EDP-T1-GE3 | MOSFET P-CH 30V 40A PPAK 8SO | ||
| SIR402 | Neu und Original | ||
| SIR402DP | Neu und Original | ||
| SIR402DP-T1-E3 | MOSFET, N, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.006ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs | ||
| SIR402DP-TI-GE3 | Neu und Original | ||
| SIR403EDP-T1-E3 | Neu und Original | ||
| SIR404DP | Neu und Original | ||
| SIR404DP-T1-E3 | Neu und Original | ||
| SIR406 | Neu und Original | ||
| SIR406DP | Neu und Original | ||
| SIR406DP-T1-E3 | Neu und Original | ||
| SIR406DP-T1-GE3-S | Neu und Original | ||
| SIR408DP | Neu und Original |