SIR470DP-T

SIR470DP-T1-GE3 vs SIR470DP-T1-E3 vs SIR470DP-T1-GE3 BSC017

 
PartNumberSIR470DP-T1-GE3SIR470DP-T1-E3SIR470DP-T1-GE3 BSC017
DescriptionMOSFET 40V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance1.9 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge155 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation104 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
Height1.04 mm--
Length6.15 mm--
SeriesSIR--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandVishay / Siliconix--
Forward Transconductance Min190 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time11 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time16 ns--
Part # AliasesSIR814DP-T1-GE3--
Unit Weight0.017870 oz--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIR470DP-T1-GE3 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
SIR470DP-T1-E3 Neu und Original
SIR470DP-T1-GE3 BSC017 Neu und Original
SIR470DP-T1-GE3-Z Neu und Original
SIR470DP-T1-GE3. N CHANNEL MOSFET, 40V, 60A, SOIC, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:40V, On Resistance Rds(on):0.0019ohm, Rds(on) Test Voltage Vg
Vishay
Vishay
SIR470DP-T1-GE3 MOSFET N-CH 40V 60A PPAK SO-8
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