PartNumber | SIR668ADP-T1-RE3 | SIR668DP-T1-RE3 |
Description | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V |
Id Continuous Drain Current | 93.6 A | 95 A |
Rds On Drain Source Resistance | 4 mOhms | 4 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 2 V |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 54 nC | 108 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 104 W | 104 W |
Configuration | Single | Single |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel |
Series | SIR | SIR |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 10 ns | 28 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 18 ns | 25 ns |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 36 ns | 38 ns |
Typical Turn On Delay Time | 21 ns | 22 ns |
Channel Mode | - | Enhancement |
Transistor Type | - | 1 N-Channel |
Forward Transconductance Min | - | 85 S |
Unit Weight | - | 0.017870 oz |