PartNumber | SIR800DP-T1-GE3 | SIR800ADP-T1-GE3 | SIR800ADP-T1-RE3 |
Description | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | MOSFET 20V Vds 12V Vgs PowerPAK SO-8 | MOSFET 20V Vds; 12/-8V Vgs PowerPAK SO-8 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel | Reel |
Series | SIR | SIR | SIR |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SIR800DP-GE3 | - | - |
Unit Weight | 0.017870 oz | - | - |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | PowerPAK-SO-8 | PowerPAK-SO-8 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 20 V | 20 V |
Id Continuous Drain Current | - | 177 A | 177 A |
Rds On Drain Source Resistance | - | 1.35 mOhms | 1.35 mOhms |
Vgs th Gate Source Threshold Voltage | - | 600 mV | 0.6 V |
Vgs Gate Source Voltage | - | 12 V, - 8 V | - 8 V, 12 V |
Qg Gate Charge | - | 53 nC | 53 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 62.5 W | 62.5 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Transistor Type | - | 1 N-Channel TrenchFET Power MOSFET | 1 N-Channel |
Forward Transconductance Min | - | 60 S | 60 S |
Fall Time | - | 10 ns | 10 ns |
Rise Time | - | 13 ns | 13 ns |
Typical Turn Off Delay Time | - | 40 ns | 40 ns |
Typical Turn On Delay Time | - | 20 ns | 20 ns |