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| PartNumber | SIRA10DP-T1-GE3 | SIRA10DP-T1-GE3. | SIRA10DP-T1-E3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 60 A | - | - |
| Rds On Drain Source Resistance | 2.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
| Vgs Gate Source Voltage | 20 V, - 16 V | - | - |
| Qg Gate Charge | 51 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 40 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK | - |
| Packaging | Reel | Cut Tape | - |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SIR | SIR | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 52 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 27 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SIRA10DP-GE3 | SIRA10DP-GE3 | - |
| Unit Weight | 0.017870 oz | 0.017870 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIRA10DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | |
| SIRA10DP-T1-GE3. | MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV | ||
| SIRA10DP-T1-E3 | Neu und Original | ||
Vishay |
SIRA10DP-T1-GE3 | MOSFET N-CH 30V 60A PPAK SO-8 |