SIRA12

SIRA12BDP-T1-GE3 vs SIRA12DP-T1-GE3

 
PartNumberSIRA12BDP-T1-GE3SIRA12DP-T1-GE3
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSYE
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8PowerPAK-SO-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current60 A60 A
Rds On Drain Source Resistance4.3 mOhms3.2 mOhms
Vgs th Gate Source Threshold Voltage1.2 V1.1 V
Vgs Gate Source Voltage10 V20 V, - 16 V
Qg Gate Charge21 nC45 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation38 W31 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReelReel
SeriesSIRSIR
Transistor Type1 N-Channel1 N-Channel
BrandVishay / SiliconixVishay / Siliconix
Forward Transconductance Min67 S51 S
Fall Time10 ns10 ns
Product TypeMOSFETMOSFET
Rise Time20 ns10 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time15 ns25 ns
Typical Turn On Delay Time10 ns10 ns
Height-1.04 mm
Length-6.15 mm
Width-5.15 mm
Part # Aliases-SIRA12DP-GE3
Unit Weight-0.017870 oz
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIRA12BDP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA12DP-T1-GE3 MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV
Vishay
Vishay
SIRA12BDP-T1-GE3 MOSFET N-CHAN 30V
SIRA12DP-T1-GE3 MOSFET N-CH 30V 25A PPAK SO-8
SIRA12DP-T1-GE3-CUT TAPE Neu und Original
SIRA12 Neu und Original
SIRA12DP-T1-E3 Neu und Original
Top