PartNumber | SIRA12BDP-T1-GE3 | SIRA12DP-T1-GE3 |
Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V 4.3mOhm@10V 25A N-Ch G-IV |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | Y | E |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-SO-8 | PowerPAK-SO-8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V |
Id Continuous Drain Current | 60 A | 60 A |
Rds On Drain Source Resistance | 4.3 mOhms | 3.2 mOhms |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1.1 V |
Vgs Gate Source Voltage | 10 V | 20 V, - 16 V |
Qg Gate Charge | 21 nC | 45 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 38 W | 31 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel |
Series | SIR | SIR |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 67 S | 51 S |
Fall Time | 10 ns | 10 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 20 ns | 10 ns |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15 ns | 25 ns |
Typical Turn On Delay Time | 10 ns | 10 ns |
Height | - | 1.04 mm |
Length | - | 6.15 mm |
Width | - | 5.15 mm |
Part # Aliases | - | SIRA12DP-GE3 |
Unit Weight | - | 0.017870 oz |