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| PartNumber | SIRA14BDP-T1-GE3 | SIRA14DP-T1-GE3 |
| Description | MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK SO-8 | PowerPAK-SO-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 21 A | 58 A |
| Rds On Drain Source Resistance | 5.38 mOhms | 4.25 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V |
| Vgs Gate Source Voltage | 20 V, - 16 V | 20 V, - 16 V |
| Qg Gate Charge | 22 nC | 29 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 65 S | 65 S |
| Fall Time | 5 ns | 8 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 5 ns | 8 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | 18 ns |
| Typical Turn On Delay Time | 10 ns | 9 ns |
| Pd Power Dissipation | - | 31.2 W |
| Tradename | - | TrenchFET, PowerPAK |
| Height | - | 1.04 mm |
| Length | - | 6.15 mm |
| Series | - | SIR |
| Width | - | 5.15 mm |
| Part # Aliases | - | SIRA14DP-GE3 |
| Unit Weight | - | 0.017870 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIRA14BDP-T1-GE3 | MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8 | |
| SIRA14DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
Vishay |
SIRA14BDP-T1-GE3 | MOSFET N-CHAN 30-V POWERPAK SO-8 | |
| SIRA14DP-T1-GE3 | MOSFET N-CH 30V 58A PPAK SO-8 | ||
| SIRA14DP-T1-GE3-G | Neu und Original |