SIRA18

SIRA18DP-T1-GE3 vs SIRA18ADP-T1-GE3 vs SIRA18BDP-T1-GE3

 
PartNumberSIRA18DP-T1-GE3SIRA18ADP-T1-GE3SIRA18BDP-T1-GE3
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8MOSFET 30V Vds 20V Vgs PowerPAK SO-8MOSFET N-Channel 30 V (D-S) MOSFET
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEYE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-SO-8PowerPAK-SO-8PowerPAK SO-8
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V-30 V
Id Continuous Drain Current33 A-40 A
Rds On Drain Source Resistance6 mOhms-5.5 mOhms
Vgs th Gate Source Threshold Voltage1.2 V-- 4.4 V
Vgs Gate Source Voltage20 V, - 16 V-- 16 V, + 20 V
Qg Gate Charge21.5 nC-12.2 nC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation14.7 W--
ConfigurationSingle--
Channel ModeEnhancement-Depletion
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAKTrenchFET
PackagingReelReelReel
Height1.04 mm1.04 mm-
Length6.15 mm6.15 mm-
SeriesSIRSIR-
Transistor Type1 N-Channel--
Width5.15 mm5.15 mm-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min54 S--
Fall Time5 ns-5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time9 ns-5 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time15 ns-15 ns
Typical Turn On Delay Time11 ns-8 ns
Unit Weight0.017870 oz--
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIRA18DP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA18ADP-T1-GE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA18BDP-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET
SIRA18DP-T1-RE3 MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SIRA18ADP-T1-E3 Neu und Original
SIRA18DP-T1-GE3-G Neu und Original
Vishay
Vishay
SIRA18ADP-T1-GE3 MOSFET N-CH 30V 30.6A POWERPAKSO
SIRA18DP-T1-GE3 MOSFET N-CH 30V 33A PPAK SO-8
SIRA18DP-T1-RE3 MOSFET N-CH 30V 33A POWERPAKSO-8
Top