SIRA3

SIRA32DP-T1-RE3 vs SIRA34DP-T1-GE3 vs SIRA36DP-T1-GE3

 
PartNumberSIRA32DP-T1-RE3SIRA34DP-T1-GE3SIRA36DP-T1-GE3
DescriptionMOSFET 25V Vds 16V Vgs PowerPAK SO-8MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3IGBT Transistors MOSFET 30V 2.8mOhm@10V 40A N-Ch G-IV
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-SO-8PowerPAK-SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V30 V-
Id Continuous Drain Current60 A40 A-
Rds On Drain Source Resistance1 mOhms5.3 mOhms-
Vgs th Gate Source Threshold Voltage2.2 V1.1 V-
Vgs Gate Source Voltage16 V, - 12 V20 V, - 16 V-
Qg Gate Charge55 nC25 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation65.7 W31.25 W-
ConfigurationSingleSingle-
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK-
PackagingReelReel-
SeriesSIRSIR-
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / SiliconixVishay / Siliconix-
Fall Time10 ns6 ns-
Product TypeMOSFETMOSFET-
Rise Time23 ns11 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns19 ns-
Typical Turn On Delay Time14 ns11 ns-
Unit Weight0.017870 oz0.017870 oz-
Channel Mode-Enhancement-
Forward Transconductance Min-52 S-
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIRA32DP-T1-RE3 MOSFET 25V Vds 16V Vgs PowerPAK SO-8
SIRA34DP-T1-GE3 MOSFET RECOMMENDED ALT 78-SIRA18ADP-T1-GE3
Vishay
Vishay
SIRA36DP-T1-GE3 IGBT Transistors MOSFET 30V 2.8mOhm@10V 40A N-Ch G-IV
SIRA34DP-T1-GE3 MOSFET N-CH 30V 40A PPAK SO-8
SIRA32DP-T1-RE3 MOSFET N-CH 25V 60A POWERPAKSO-8
SIRA334 Neu und Original
Top