PartNumber | SIS407ADN-T1-GE3 | SIS407DN-T1-GE3 |
Description | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 | MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | Y | E |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | PowerPAK-1212-8 | PowerPAK-1212-8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V |
Id Continuous Drain Current | 18 A | 25 A |
Rds On Drain Source Resistance | 9 mOhms | 9.5 mOhms |
Vgs th Gate Source Threshold Voltage | 400 mV | 400 mV |
Vgs Gate Source Voltage | 4.5 V | 4.5 V |
Qg Gate Charge | 112 nC | 38 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 39.1 W | 33 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | TrenchFET, PowerPAK | TrenchFET, PowerPAK |
Packaging | Reel | Reel |
Height | 1.04 mm | 1.04 mm |
Length | 3.3 mm | 3.3 mm |
Series | SIS | SIS |
Transistor Type | 1 P-Channel | 1 P-Channel |
Width | 3.3 mm | 3.3 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 70 S | 60 S |
Fall Time | 36 ns | 38 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 4 ns | 28 ns |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 120 ns | 92 ns |
Typical Turn On Delay Time | 12 ns | 23 ns |
Part # Aliases | - | SIS407DN-GE3 |