SIS407

SIS407ADN-T1-GE3 vs SIS407DN-T1-GE3

 
PartNumberSIS407ADN-T1-GE3SIS407DN-T1-GE3
DescriptionMOSFET -20V Vds 8V Vgs PowerPAK 1212-8MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSYE
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8PowerPAK-1212-8
Number of Channels1 Channel1 Channel
Transistor PolarityP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V20 V
Id Continuous Drain Current18 A25 A
Rds On Drain Source Resistance9 mOhms9.5 mOhms
Vgs th Gate Source Threshold Voltage400 mV400 mV
Vgs Gate Source Voltage4.5 V4.5 V
Qg Gate Charge112 nC38 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation39.1 W33 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameTrenchFET, PowerPAKTrenchFET, PowerPAK
PackagingReelReel
Height1.04 mm1.04 mm
Length3.3 mm3.3 mm
SeriesSISSIS
Transistor Type1 P-Channel1 P-Channel
Width3.3 mm3.3 mm
BrandVishay / SiliconixVishay / Siliconix
Forward Transconductance Min70 S60 S
Fall Time36 ns38 ns
Product TypeMOSFETMOSFET
Rise Time4 ns28 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time120 ns92 ns
Typical Turn On Delay Time12 ns23 ns
Part # Aliases-SIS407DN-GE3
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SIS407ADN-T1-GE3 MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
SIS407DN-T1-GE3 MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
Vishay
Vishay
SIS407ADN-T1-GE3 IGBT Transistors MOSFET -20V [email protected] -18A P-Ch
SIS407DN-T1-GE3 MOSFET P-CH 20V 25A 1212-8 PPAK
SIS407 Neu und Original
SIS407ADN Neu und Original
SIS407DN Neu und Original
SIS407DN-T1-E3 Neu und Original
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