PartNumber | SMBTA06UPNE6327HTSA1 | SMBTA06E6327HTSA1 | SMBTA06E6433HTMA1 |
Description | Bipolar Transistors - BJT NPN / PNP Silicon AF TRANSISTOR ARRAY | Bipolar Transistors - BJT NPN 80 V 500 mA | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SC-74-6 | SOT-23-3 | SOT-23-3 |
Transistor Polarity | NPN, PNP | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 80 V | 80 V | 80 V |
Collector Base Voltage VCBO | 80 V | 80 V | 80 V |
Emitter Base Voltage VEBO | 4 V | 4 V | 4 V |
Collector Emitter Saturation Voltage | 0.25 V | 0.25 V | 0.25 V |
Maximum DC Collector Current | 1 A | 1 A | 1 A |
Gain Bandwidth Product fT | 100 MHz | 100 MHz | 100 MHz |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | SMBTA06 | SMBTA06 | SMBTA06 |
Packaging | Reel | Reel | Reel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Continuous Collector Current | 500 mA | 500 mA | 500 mA |
Pd Power Dissipation | 330 mW | 330 mW | 330 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 | 10000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 06UPN E6327 SMBTA SMBTA6UPNE6327XT SP000012393 | 06 E6327 SMBTA SMBTA6E6327XT SP000011686 | 06 E6433 SMBTA SMBTA6E6433XT SP000011688 |
Unit Weight | 0.000430 oz | 0.000282 oz | 0.000282 oz |
Height | - | 1 mm | - |
Length | - | 2.9 mm | - |
Width | - | 1.3 mm | - |
Qualification | - | AEC-Q101 | - |