 |  | |
| PartNumber | SMBTA56E6327HTSA1 | SMBTA56E6327 |
| Description | Bipolar Transistors - BJT AF TRANS GP BJT PNP 80V 0.5A | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon |
| Manufacturer | Infineon | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-23-3 | - |
| Transistor Polarity | PNP | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 80 V | - |
| Collector Base Voltage VCBO | 80 V | - |
| Emitter Base Voltage VEBO | 4 V | - |
| Collector Emitter Saturation Voltage | 0.25 V | - |
| Maximum DC Collector Current | 1 A | - |
| Gain Bandwidth Product fT | 100 MHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Series | SMBTA56 | - |
| Height | 1 mm | - |
| Length | 2.9 mm | - |
| Packaging | Reel | - |
| Width | 1.3 mm | - |
| Brand | Infineon Technologies | - |
| Continuous Collector Current | 500 mA | - |
| Pd Power Dissipation | 330 mW | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 56 E6327 SMBTA SMBTA56E6327XT SP000011692 | - |
| Unit Weight | 0.000282 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
SMBTA56E6327HTSA1 | Bipolar Transistors - BJT AF TRANS GP BJT PNP 80V 0.5A | |
| SMBTA56E6327 | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | ||
Infineon Technologies |
SMBTA56E6327HTSA1 | TRANS PNP 80V 0.5A SOT-23 |