 | |  | |
| PartNumber | SMMBT5088LT1G | SMMBT5089LT1G | SMMBT5401LT1 |
| Description | Bipolar Transistors - BJT SS LN XSTR NPN 35V | Bipolar Transistors - BJT SS LN XSTR NPN 25V | Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | NPN | NPN | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 30 V | 30 V | - |
| Collector Base Voltage VCBO | 35 V | 35 V | - |
| Emitter Base Voltage VEBO | 4.5 V | 4.5 V | - |
| Collector Emitter Saturation Voltage | 0.5 V | 0.5 V | - 0.2 V |
| Maximum DC Collector Current | 50 mA | 50 mA | - |
| Gain Bandwidth Product fT | 40 MHz | 40 MHz | 100 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | MMBT5088L | MMBT5089L | MMBT5401L |
| DC Current Gain hFE Max | 1200 | 1200 | 240 |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 50 mA | 50 mA | - 500 mA |
| DC Collector/Base Gain hfe Min | 300 | 300 | - |
| Pd Power Dissipation | 300 mW | 300 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.007090 oz |
| Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-23-3 (TO-236) |
| Power Max | - | - | 300mW |
| Transistor Type | - | - | PNP |
| Current Collector Ic Max | - | - | 500mA |
| Voltage Collector Emitter Breakdown Max | - | - | 150V |
| DC Current Gain hFE Min Ic Vce | - | - | 60 @ 10mA, 5V |
| Vce Saturation Max Ib Ic | - | - | 500mV @ 5mA, 50mA |
| Current Collector Cutoff Max | - | - | 50nA (ICBO) |
| Frequency Transition | - | - | 300MHz |
| Pd Power Dissipation | - | - | 225 mW |
| Collector Emitter Voltage VCEO Max | - | - | - 150 V |
| Collector Base Voltage VCBO | - | - | - 160 V |
| Emitter Base Voltage VEBO | - | - | - 5 V |
| DC Collector Base Gain hfe Min | - | - | 60 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| SMMBT5401LT1G | Bipolar Transistors - BJT SS HV XSTR SPCL TR | ||
| SMMBT5551LT1G | Bipolar Transistors - BJT SS HV XSTR SPCL TR | ||
| SMMBT5551LT3G | Bipolar Transistors - BJT SS SOT23 HV XSTR SPCL TR | ||
| SMMBT5088LT1G | Bipolar Transistors - BJT SS LN XSTR NPN 35V | ||
| SMMBT5089LT1G | Bipolar Transistors - BJT SS LN XSTR NPN 25V | ||
| SMMBT5401LT1 | Small Signal Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB | ||
| SMMBT5551LT1 | Neu und Original | ||
ON Semiconductor |
SMMBT5551LT3G | TRANS NPN 160V 0.6A SOT23 | |
| SMMBT5089LT1G | Bipolar Transistors - BJT SS LN XSTR NPN 25V | ||
| SMMBT5088LT1G | Bipolar Transistors - BJT SS LN XSTR NPN 35V | ||
| SMMBT5401LT1G | Bipolar Transistors - BJT SS HV XSTR SPCL TR | ||
| SMMBT5551LT1G | Bipolar Transistors - BJT SS HV XSTR SPCL TR |