 |  | | |
| PartNumber | SMMBTA56LT1G | SMMBTA56LT1 | SMMBTA56LT1G-CUT TAPE |
| Description | Bipolar Transistors - BJT SS DR XSTR SPCL TR | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 80 V | - | - |
| Collector Base Voltage VCBO | - 80 V | - | - |
| Emitter Base Voltage VEBO | - 4 V | - | - |
| Collector Emitter Saturation Voltage | - 0.25 V | - | - |
| Maximum DC Collector Current | - 500 mA | - | - |
| Gain Bandwidth Product fT | 50 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MMBTA56L | - | - |
| Packaging | Reel | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 500 mA | - | - |
| DC Collector/Base Gain hfe Min | 100 | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| SMMBTA56LT1G | Bipolar Transistors - BJT SS DR XSTR SPCL TR | ||
| SMMBTA56LT1 | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB | ||
| SMMBTA56LT1G-CUT TAPE | Neu und Original | ||
ON Semiconductor |
SMMBTA56LT1G | Bipolar Transistors - BJT SS DR XSTR SPCL TR |