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| PartNumber | SPA04N60C3 | SPA04N60C3,04N60C3 | SPA04N60C3,04N60C3, |
| Description | IGBT Transistors MOSFET N-Ch 650V 4.5A TO220FP-3 CoolMOS C3 | ||
| Manufacturer | INF | - | - |
| Product Category | FETs - Single | - | - |
| Series | CoolMOS C3 | - | - |
| Packaging | Tube | - | - |
| Part Aliases | SP000216299 SPA04N60C3XK SPA04N60C3XKSA1 | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Mounting Style | Through Hole | - | - |
| Tradename | CoolMOS | - | - |
| Package Case | TO-220-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 31 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 9.5 ns | - | - |
| Rise Time | 2.5 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4.5 A | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Rds On Drain Source Resistance | 950 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 58.5 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Channel Mode | Enhancement | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
SPA04N60C3XKSA1 | MOSFET LOW POWER_LEGACY | |
| SPA04N60C3 | IGBT Transistors MOSFET N-Ch 650V 4.5A TO220FP-3 CoolMOS C3 | ||
Infineon Technologies |
SPA04N60C3XKSA1 | MOSFET N-CH 650V 4.5A TO220FP | |
| SPA04N60C3,04N60C3 | Neu und Original | ||
| SPA04N60C3,04N60C3, | Neu und Original | ||
| SPA04N60C3. | Neu und Original |