SPB100N

SPB100N03S2-03 G vs SPB100N03S2-03 vs SPB100N03S2L-03

 
PartNumberSPB100N03S2-03 GSPB100N03S2-03SPB100N03S2L-03
DescriptionMOSFET N-Ch 30V 100A D2PAK-2MOSFET N-CH 30V 100A D2PAKMOSFET N-CH 30V 100A D2PAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance3.3 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Fall Time39 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time44 ns--
Typical Turn On Delay Time24 ns--
Part # AliasesSPB100N03S203GXT--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
SPB100N03S2-03 G MOSFET N-Ch 30V 100A D2PAK-2
Infineon Technologies
Infineon Technologies
SPB100N03S2-03 MOSFET N-CH 30V 100A D2PAK
SPB100N03S2-03 G MOSFET N-CH 30V 100A D2PAK
SPB100N03S2L-03 MOSFET N-CH 30V 100A D2PAK
SPB100N03S2L-03 G MOSFET N-CH 30V 100A D2PAK
SPB100N03S2L03T MOSFET N-CH 30V 100A D2PAK
SPB100N04S2-04 MOSFET N-CH 40V 100A D2PAK
SPB100N04S2L-03 MOSFET N-CH 40V 100A D2PAK
SPB100N06S2-05 MOSFET N-CH 55V 100A D2PAK
SPB100N06S2L-05 MOSFET N-CH 55V 100A D2PAK
SPB100N08S2-07 MOSFET N-CH 75V 100A D2PAK
SPB100N08S2L-07 MOSFET N-CH 75V 100A D2PAK
SPB100N03S2-03G Neu und Original
SPB100N03S2-03T Neu und Original
SPB100N03S2L-03G MOSFET N-Ch 30V 100A D2PAK-2
SPB100N06S2-05+ MOSFET N-CH 55V 100A D2PAK
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