 |  | | |
| PartNumber | SPB11N60C3 | SPB11N60C3 11N60 | SPB11N60C3,11N60C3 |
| Description | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 11 A | - | - |
| Rds On Drain Source Resistance | 380 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 45 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 125 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | CoolMOS C3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 8.3 S | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 44 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SP000013519 SPB11N60C3ATMA1 SPB11N6C3XT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
SPB11N60C3 | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3 | |
| SPB11N60C3ATMA1 | MOSFET N-CH 650V 11A D2PAK | ||
Infineon Technologies |
SPB11N60C3ATMA1 | MOSFET LOW POWER_LEGACY | |
| SPB11N60C3 | Trans MOSFET N-CH 600V 11A 3-Pin TO-263 T/R (Alt: SP000013519) | ||
| SPB11N60C3 11N60 | Neu und Original | ||
| SPB11N60C3,11N60C3 | Neu und Original |