 |  | | |
| PartNumber | SPD15P10P G | SPD14N06S2-80 | SPD15N06S2L-64 |
| Description | MOSFET P-Ch -100V 15A DPAK-2 | MOSFET N-CH 55V 17A DPAK | MOSFET N-CH 55V 19A DPAK |
| Manufacturer | Infineon | - | infineon |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 15 A | - | - |
| Rds On Drain Source Resistance | 240 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 37 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 128 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | SIPMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | SPD15P10 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 4.7 S | - | - |
| Fall Time | 16 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 23 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 9.5 ns | - | - |
| Part # Aliases | SP000212233 SPD15P10PGBTMA1 SPD15P1PGXT | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD15P10P G | MOSFET P-Ch -100V 15A DPAK-2 | |
| SPD15P10PL G | MOSFET P-Ch -100V 15A DPAK-2 | ||
| SPD15P10PGBTMA1 | MOSFET P-Ch -100V 15A DPAK-2 | ||
| SPD15P10P G | Darlington Transistors MOSFET P-Ch -100V 15A DPAK-2 | ||
| SPD15P10PGBTMA1 | MOSFET P-CH 100V 15A TO252-3 | ||
| SPD14N06S2-80 | MOSFET N-CH 55V 17A DPAK | ||
| SPD15N06S2L-64 | MOSFET N-CH 55V 19A DPAK | ||
| SPD15P10PL G | MOSFET P-Ch -100V 15A DPAK-2 | ||
API Delevan |
SPD127R-332M | Fixed Inductors 3.3uH 20% .018ohm Shielded Choke SMT | |
| SPD127R-474M | Fixed Inductors 470uH 20% .98ohm Shielded Choke SMT | ||
| SPD127R-394M | Fixed Inductors 390uH 20% .75ohm Shielded Choke SMT | ||
| SPD127R-683M | Fixed Inductors 68uH 20% .14ohm Shielded Choke SMT | ||
| SPD127R-682M | Fixed Inductors 6.8uH 20% .03ohm Shielded Choke SMT | ||
| SPD127R-563M | Fixed Inductors 56uH 20% .12ohm Shielded Choke SMT | ||
| SPD127R-332M | Fixed Inductors 3.3uH 20% .018ohm Shielded Choke SMT | ||
| SPD127R-824M | Fixed Inductors 820uH 20% 1.4ohm Shielded Choke SMT | ||
| SPD127R-474M | Fixed Inductors 470uH 20% .98ohm Shielded Choke SMT | ||
| SPD127R-473M | Fixed Inductors 47uH 20% .1ohm Shielded Choke SMT | ||
| SPD127R-334M | Fixed Inductors 330 UH 20% | ||
| SPD127R-683M | Fixed Inductors 68uH 20% .14ohm Shielded Choke SMT | ||
| SPD127R-393M | Fixed Inductors 39uH 20% .08ohm Shielded Choke SMT | ||
| SPD127R-564M | Fixed Inductors 560uH 20% 1.15ohm Shielded Choke SMT | ||
| SPD127R-684M | Fixed Inductors 680uH 20% 1.22ohm Shielded Choke SMT | ||
| SPD127R-823M | Fixed Inductors 82uH 20% .17ohm Shielded Choke SMT | ||
| SPD127R-394M | Fixed Inductors 390uH 20% .75ohm Shielded Choke SMT | ||
| SPD127R-333M | Fixed Inductors 33uH 20% .065ohm Shielded Choke SMT | ||
| SPD127R-472M | Fixed Inductors 4.7uH 20% .022ohm Shielded Choke SMT | ||
| SPD15N06S2L-64 2N06L64 | Neu und Original | ||
| SPD127R-563MTR | Fixed Inductors 56 UH 20% | ||
| SPD127R-683MTR | Fixed Inductors .68 UH 20% | ||
| SPD1306 | Neu und Original | ||
| SPD13302-1000M | Neu und Original | ||
| SPD1367-0R56MH | Neu und Original | ||
| SPD1367-4R7M | Neu und Original | ||
| SPD13N05+L | Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| SPD13N05L | Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| SPD14N05 | Neu und Original | ||
| SPD14N06S280 | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| SPD15N06 | Neu und Original | ||
| SPD15N06S2L | Neu und Original | ||
| SPD15P10L G | Neu und Original | ||
| SPD15P10PL IRFR5410TRP | Neu und Original | ||
| SPD15P10PL//SPD15P10PL P | Neu und Original | ||
| SPD127R-473MTR | Fixed Inductors 47 UH 20% | ||
| SPD15P10P | Neu und Original | ||
| SPD1305NL | Infineon OptlMOS™ N-Channel Power MOSFET SPD15N06S2L-64 - TO252-3-11 | ||
| SPD1338-100M | Neu und Original | ||
| SPD15181 | 15 VDC POWER SUPPLY 18W | ||
| SPD15N06S2L64 | - Bulk (Alt: SPD15N06S2L64) | ||
| SPD15P10PG | Trans MOSFET P-CH 100V 15A 3-Pin TO-252 T/R (Alt: SP000212233) |