PartNumber | SPD15P10P G | SPD15P10PGBTMA1 | SPD15N06S2L-64 |
Description | MOSFET P-Ch -100V 15A DPAK-2 | MOSFET P-Ch -100V 15A DPAK-2 | MOSFET N-CH 55V 19A DPAK |
Manufacturer | Infineon | Infineon | infineon |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 15 A | 15 A | - |
Rds On Drain Source Resistance | 240 mOhms | 160 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 37 nC | 48 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 128 W | 128 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | SIPMOS | - | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | SPD15P10 | XPD15P10 | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 4.7 S | 4.7 S | - |
Fall Time | 16 ns | 16 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 23 ns | 23 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 33 ns | 33 ns | - |
Typical Turn On Delay Time | 9.5 ns | 9.5 ns | - |
Part # Aliases | SP000212233 SPD15P10PGBTMA1 SPD15P1PGXT | G SP000212233 SPD15P10P SPD15P1PGXT | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |