SPD30N03S2L1

SPD30N03S2L10GBTMA1 vs SPD30N03S2L10G vs SPD30N03S2L1C

 
PartNumberSPD30N03S2L10GBTMA1SPD30N03S2L10GSPD30N03S2L1C
DescriptionMOSFET N-Ch 30V 30A DPAK-2
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance7.8 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge41.8 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation100 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min23.8 S--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time6.1 ns--
Part # AliasesG SP000443918 SPD30N03S2L-10 SPD30N03S2L10GXT--
Unit Weight0.139332 oz--
Series-XPD30N03-
Part Aliases-G SP000443918 SPD30N03S2L-10 SPD30N03S2L10GXT-
Package Case-TO-252-3-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
SPD30N03S2L10GBTMA1 MOSFET N-Ch 30V 30A DPAK-2
SPD30N03S2L10G Neu und Original
Infineon Technologies
Infineon Technologies
SPD30N03S2L10GBTMA1 MOSFET N-CH 30V 30A TO252-3
SPD30N03S2L1C Neu und Original
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