PartNumber | SPD30P06P G | SPD30P06PGBTMA1 | SPD30P06P |
Description | MOSFET P-Ch -60V -30A DPAK-2 | MOSFET P-Ch -60V -30A DPAK-2 | MOSFET P-Ch -60V -30A DPAK-2 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
Id Continuous Drain Current | 30 A | 30 A | 30 A |
Rds On Drain Source Resistance | 75 mOhms | 69 mOhms | 75 mOhms |
Vgs th Gate Source Threshold Voltage | 2.1 V | 4 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
Qg Gate Charge | 32 nC | 48 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 125 W | 125 W | 125 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | SIPMOS | - | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Series | SPD30P06 | XPD30P06 | - |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 5.2 S | 5.2 S | - |
Fall Time | 20 ns | 20 ns | 20 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | 11 ns | 11 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 30 ns | 30 ns | 30 ns |
Typical Turn On Delay Time | 13 ns | 13 ns | 13 ns |
Part # Aliases | SP000441776 SPD30P06PGBTMA1 SPD3P6PGXT | G SP000441776 SPD30P06P SPD3P6PGXT | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Moisture Sensitive | - | - | Yes |