SPD35

SPD35N10 vs SPD356-VY vs SPD356-XY

 
PartNumberSPD35N10SPD356-VYSPD356-XY
DescriptionMOSFET N-Ch 100V 35A DPAK-2
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current35 A--
Rds On Drain Source Resistance44 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min23 S / 12 S--
Fall Time23 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time63 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time39 ns--
Typical Turn On Delay Time12.2 ns--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
SPD35N10 MOSFET N-Ch 100V 35A DPAK-2
SPD356-VY Neu und Original
SPD356-XY Neu und Original
Infineon Technologies
Infineon Technologies
SPD35N10 MOSFET N-CH 100V 35A DPAK
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