 | |  | |
| PartNumber | SPD50N03S207GBTMA1 | SPD50N03S2-07 | SPD50N03 |
| Description | MOSFET LV POWER MOS | MOSFET N-Ch 30V 50A DPAK-2 | |
| Manufacturer | Infineon | Infineon | INFINEON |
| Product Category | MOSFET | MOSFET | FETs - Single |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | G SP000443920 SPD50N03S2-07 SPD50N03S207GXT | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| RoHS | - | Y | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Id Continuous Drain Current | - | 50 A | - |
| Rds On Drain Source Resistance | - | 7.3 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 136 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Fall Time | - | 25 ns | - |
| Rise Time | - | 36 ns | - |
| Factory Pack Quantity | - | 2500 | - |
| Typical Turn Off Delay Time | - | 27 ns | - |
| Typical Turn On Delay Time | - | 14 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD50N03S207GBTMA1 | MOSFET LV POWER MOS | |
| SPD50N03S2-07 | MOSFET N-Ch 30V 50A DPAK-2 | ||
| SPD50N03S2L-06 | MOSFET N-Ch 30V 50A DPAK-2 | ||
| SPD50N03S2L-06 G | IGBT Transistors MOSFET N-Ch 30V 50A DPAK-2 | ||
| SPD50N03 | Neu und Original | ||
| SPD50N03L | Neu und Original | ||
| SPD50N03S2 | Neu und Original | ||
| SPD50N03S2-7 | Neu und Original | ||
| SPD50N03S207 | Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | ||
| SPD50N03S2L-13 | Neu und Original | ||
| SPD50N03SZ-07 | Neu und Original | ||
Infineon Technologies |
SPD50N03S2-07 | MOSFET N-CH 30V 50A DPAK | |
| SPD50N03S207GBTMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
| SPD50N03S2L-06 | MOSFET N-CH 30V 50A DPAK | ||
| SPD50N03S2L06GBTMA1 | MOSFET N-CH 30V 50A TO252-3 | ||
| SPD50N03S2L06T | MOSFET N-CH 30V 50A DPAK | ||
| SPD50N03S2-07 G | - Bulk (Alt: SPD50N03S2-07 G) | ||
| SPD50N03S2-07G | - Bulk (Alt: SPD50N03S2-07G) | ||
| SPD50N03S2L | MOSFET N-CH 30V 50A DPAK | ||
| SPD50N03S2L-06G | Power Field-Effect Transistor, 50A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |