SPP04N60C

SPP04N60C3XKSA1 vs SPP04N60C3HKSA1

 
PartNumberSPP04N60C3XKSA1SPP04N60C3HKSA1
DescriptionMOSFET N-Ch 600V 4.5A TO220-3MOSFET Order Manufacturer Part Number SPP04N60C3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSY-
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage600 V-
Id Continuous Drain Current4.5 A-
Rds On Drain Source Resistance850 mOhms-
Vgs th Gate Source Threshold Voltage3 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge19 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation50 W-
ConfigurationSingle-
TradenameCoolMOS-
PackagingTube-
Height15.65 mm15.65 mm
Length10 mm10 mm
SeriesCoolMOS C3-
Transistor Type1 N-Channel-
Width4.4 mm4.4 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min4.4 S-
Fall Time9.5 ns-
Product TypeMOSFETMOSFET
Rise Time2.5 ns-
Factory Pack Quantity500-
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time58.5 ns-
Typical Turn On Delay Time6 ns-
Part # AliasesSP000681024 SPP04N60C3SP000013534 SPP04N60C3 SPP04N60C3XK
Unit Weight0.211644 oz-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
SPP04N60C3XKSA1 MOSFET N-Ch 600V 4.5A TO220-3
SPP04N60C3XKSA1 Darlington Transistors MOSFET N-Ch 600V 4.5A TO220-3
SPP04N60C3HKSA1 MOSFET N-CH 650V 4.5A TO-220AB
Infineon Technologies
Infineon Technologies
SPP04N60C3HKSA1 MOSFET Order Manufacturer Part Number SPP04N60C3
SPP04N60C3 04N60C3 Neu und Original
SPP04N60C2 Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SPP04N60C3 Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-220 Tube
Top