SPW21

SPW21N50C3 vs SPW21N50 vs SPW21N50C3,21N50C3

 
PartNumberSPW21N50C3SPW21N50SPW21N50C3,21N50C3
DescriptionMOSFET N-Ch 500V 21A TO247-3 CoolMOS C3
ManufacturerInfineonINFINEON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current21 A--
Rds On Drain Source Resistance190 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation208 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolMOSCoolMOS-
PackagingTubeTube-
Height21.1 mm--
Length16.13 mm--
SeriesCoolMOS C3CoolMOS C3-
Transistor Type1 N-Channel1 N-Channel-
Width5.21 mm--
BrandInfineon Technologies--
Fall Time4.5 ns4.5 ns-
Product TypeMOSFET--
Rise Time5 ns5 ns-
Factory Pack Quantity240--
SubcategoryMOSFETs--
Typical Turn Off Delay Time67 ns67 ns-
Typical Turn On Delay Time10 ns10 ns-
Part # AliasesSP000014464 SPW21N50C3FKSA1 SPW21N5C3XK--
Unit Weight1.340411 oz1.340411 oz-
Part Aliases-SP000014464 SPW21N50C3FKSA1 SPW21N50C3XK-
Package Case-TO-247-3-
Pd Power Dissipation-208 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-21 A-
Vds Drain Source Breakdown Voltage-500 V-
Rds On Drain Source Resistance-190 mOhms-
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
SPW21N50C3 MOSFET N-Ch 500V 21A TO247-3 CoolMOS C3
SPW21N50C3FKSA1 MOSFET N-CH 560V 21A TO-247
Infineon Technologies
Infineon Technologies
SPW21N50C3FKSA1 MOSFET HIGH POWER_LEGACY
SPW21N50C3 Darlington Transistors MOSFET N-Ch 500V 21A TO247-3 CoolMOS C3
SPW21N50 Neu und Original
SPW21N50C3,21N50C3 Neu und Original
SPW21N50C3,21N50C3, Neu und Original
SPW21N50C3,SPP21N50C3,SP Neu und Original
SPW21N50C3S Neu und Original
Top