 |  | | |
| PartNumber | SQ1922AEEH-T1_GE3 | SQ1920 | SQ1922EEH-T1-GE3 |
| Description | MOSFET Dual Nch 20V Vds SOT-363 | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 0.85 A | - | - |
| Rds On Drain Source Resistance | 300 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 1.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 1.5 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9.6 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 8 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ1922AEEH-T1_GE3 | MOSFET Dual Nch 20V Vds SOT-363 | |
| SQ1922EEH-T1_GE3 | MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified | ||
| SQ1920 | Neu und Original | ||
| SQ1922EEH-T1-GE3 | Neu und Original | ||
Vishay |
SQ1922EEH-T1_GE3 | MOSFET 2N-CH 20V SC70-6 |