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| PartNumber | SQ2308CES-T1_GE3 | SQ2303ES-T1_GE3 | SQ2308CES-T1-GE3 |
| Description | MOSFET 60V 2.3A 2watt AEC-Q101 Qualified | MOSFET P-Channel 30V AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQ2308CES-T1_GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 30 V | - |
| Id Continuous Drain Current | 2.3 A | 2.5 A | - |
| Rds On Drain Source Resistance | 150 mOhms | 170 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 5.3 nC | 4.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 2 W | 1.9 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SQ | SQ | SQ |
| Transistor Type | 1 N-Channel | 1 P-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 5.5 S | 4 S | - |
| Fall Time | 12 ns | 8 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 8 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns | 12 ns | - |
| Typical Turn On Delay Time | 4 ns | 5 ns | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Part # Aliases | - | - | SQ2308ES-T1-GE3 |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ2308CES-T1_GE3 | MOSFET 60V 2.3A 2watt AEC-Q101 Qualified | |
| SQ2303ES-T1_GE3 | MOSFET P-Channel 30V AEC-Q101 Qualified | ||
| SQ2309ES-T1-GE3 | MOSFET RECOMMENDED ALT 781-SQ2309ES-T1_GE3 | ||
| SQ2308CES-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQ2308CES-T1_GE3 | ||
Vishay |
SQ2303ES-T1_GE3 | MOSFET P-CHAN 30V SOT23 | |
| SQ2301ES-T1_GE3 | MOSFET P-CH 20V 3.9A TO236 | ||
| SQ2308CES-T1_GE3 | MOSFET N-CH 60V 2.3A | ||
| SQ2308CES-T1_GE3-CUT TAPE | Neu und Original | ||
| SQ2000800DIDNC | Neu und Original | ||
| SQ2003DW | Neu und Original | ||
| SQ2003J/883 | Neu und Original | ||
| SQ201 | RF POWER FIELD-EFFECT TRANSISTOR, 2-ELEMENT, ULTRA HIGH FREQUENCY BAND, SILICON, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET | ||
| SQ2019H2 | Neu und Original | ||
| SQ201AJ | Neu und Original | ||
| SQ202 | Neu und Original | ||
| SQ203AJ | Neu und Original | ||
| SQ212 | Neu und Original | ||
| SQ2200 | Neu und Original | ||
| SQ2200 3.579545M | Neu und Original | ||
| SQ2200-.25MHZ | Neu und Original | ||
| SQ2200-42.000M | Neu und Original | ||
| SQ2200-5.000M | Neu und Original | ||
| SQ22001600M | Neu und Original | ||
| SQ2200E-1.000M | Neu und Original | ||
| SQ221 | Neu und Original | ||
| SQ224532.768MHZ | Neu und Original | ||
| SQ2245E-11.520 MHZ | Neu und Original | ||
| SQ2245ES-1.8432M | Neu und Original | ||
| SQ2245SV-10.0M | Neu und Original | ||
| SQ23-010 | Neu und Original | ||
| SQ230 | Neu und Original | ||
| SQ2301ES | Neu und Original | ||
| SQ2301ES-T1-E3 | Neu und Original | ||
| SQ2301ES-T1-GE3 | P-CHANNEL 20-V (D-S) 175C MOSF | ||
| SQ2303ES | Neu und Original | ||
| SQ2303ES-T1-GE3 | P-CHANNEL 30-V (D-S) 175C MOSF | ||
| SQ2306 | Neu und Original | ||
| SQ2308 | Neu und Original | ||
| SQ2308BES | Neu und Original | ||
| SQ2308BES-T1-E3 | Neu und Original | ||
| SQ2308BES-T1-GE3 | Neu und Original | ||
| SQ2308CES | Neu und Original | ||
| SQ2308CES-T1-GE3 | Trans MOSFET N-CH 60V 2.3A Automotive 3-Pin SOT-23 T/R | ||
| SQ2308E | Neu und Original | ||
| SQ2308ES | Neu und Original | ||
| SQ2308ES-T1-GE3 | Trans MOSFET N-CH 60V 2.3A 3-Pin SOT-23 T/R (Alt: SQ2308ES-T1-GE3) | ||
| SQ2308ES-TI-GE3 | Neu und Original | ||
| SQ2308EST1GE3 | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | ||
| SQ2309ES-T1-E3 | Neu und Original | ||
| SQ2309ES-T1-GE3 | Trans MOSFET P-CH 60V 1.7A Automotive 3-Pin SOT-23 T/R |