SQ3419

SQ3419AEEV-T1_GE3 vs SQ3419EV-T1_GE3 vs SQ3419EEV-T1-GE3

 
PartNumberSQ3419AEEV-T1_GE3SQ3419EV-T1_GE3SQ3419EEV-T1-GE3
DescriptionMOSFET -40V Vds TSOP-6 AEC-Q101 QualifiedMOSFET P Ch -40Vds 20Vgs AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQ3419EV-T1_GE3
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTSOP-6TSOP-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current6.9 A6.9 A-
Rds On Drain Source Resistance48 mOhms48 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V2.5 V-
Vgs Gate Source Voltage12 V20 V-
Qg Gate Charge12.5 nC11.3 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation5 W5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101AEC-Q101
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSQSQSQ
Transistor Type1 P-Channel1 P-Channel-
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Fall Time31 ns31 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time24 ns24 ns-
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time26 ns26 ns-
Typical Turn On Delay Time9 ns8 ns-
Forward Transconductance Min-8 S-
Part # Aliases--SQ3419EEV-GE3
Unit Weight--0.000705 oz
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ3419AEEV-T1_GE3 MOSFET -40V Vds TSOP-6 AEC-Q101 Qualified
SQ3419EV-T1_GE3 MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
SQ3419EEV-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ3419EV-T1_GE3
Vishay
Vishay
SQ3419EV-T1_GE3 MOSFET P-CH 40V 7.4A 6TSOP
SQ3419AEEV-T1_GE3 MOSFET P-CHANNEL 40V 6.9A 6TSOP
SQ3419EEV-T1-GE3 MOSFET P-CH 40V 7.4A 6TSOP
SQ3419AEEV-T1-GE3 Neu und Original
SQ3419EEV Neu und Original
SQ3419EV-T1-GE3 Neu und Original
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