PartNumber | SQ3419AEEV-T1_GE3 | SQ3419EV-T1_GE3 | SQ3419EEV-T1-GE3 |
Description | MOSFET -40V Vds TSOP-6 AEC-Q101 Qualified | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQ3419EV-T1_GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TSOP-6 | TSOP-6 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 6.9 A | 6.9 A | - |
Rds On Drain Source Resistance | 48 mOhms | 48 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 12 V | 20 V | - |
Qg Gate Charge | 12.5 nC | 11.3 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 5 W | 5 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Series | SQ | SQ | SQ |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 31 ns | 31 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 24 ns | 24 ns | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 26 ns | 26 ns | - |
Typical Turn On Delay Time | 9 ns | 8 ns | - |
Forward Transconductance Min | - | 8 S | - |
Part # Aliases | - | - | SQ3419EEV-GE3 |
Unit Weight | - | - | 0.000705 oz |