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| PartNumber | SQ3457EV-T1_GE3 | SQ3457EV | SQ3457EV-T1-GE3 |
| Description | MOSFET P-Channel 30V AEC-Q101 Qualified | P-CHANNEL 30-V (D-S) 175C MOSF | |
| Manufacturer | Vishay | - | VIS |
| Product Category | MOSFET | - | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOP-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 6.8 A | - | - |
| Rds On Drain Source Resistance | 35 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 21 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 9 S | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 18 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQ3457EV-T1_GE3 | MOSFET P-Channel 30V AEC-Q101 Qualified | |
| SQ3457EV | Neu und Original | ||
| SQ3457EV-T1-GE3 | P-CHANNEL 30-V (D-S) 175C MOSF | ||
| SQ3457KGD | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6.8A I(D), 30V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
Vishay |
SQ3457EV-T1_GE3 | MOSFET P-CHANNEL 30V 6.8A 6TSOP |