SQ42

SQ4284EY-T1_GE3 vs SQ4284EY-T1-GE3 vs SQ4282EY-T1_GE3

 
PartNumberSQ4284EY-T1_GE3SQ4284EY-T1-GE3SQ4282EY-T1_GE3
DescriptionMOSFET 40V 8A 3.9W AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQ4284EY-T1_GE3MOSFET 2 N-CHANNEL 30V 8A 8SOIC
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance11.2 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge45 nC, 45 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.9 W--
ConfigurationDual--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
SeriesSQSQ-
Transistor Type2 N-Channel--
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min30 S, 30 S--
Fall Time11 ns, 11 ns--
Product TypeMOSFETMOSFET-
Rise Time40 ns, 40 ns--
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time32 ns, 32 ns--
Typical Turn On Delay Time10 ns, 10 ns--
Unit Weight0.017870 oz0.017870 oz-
Hersteller Teil # Beschreibung RFQ
Vishay / Siliconix
Vishay / Siliconix
SQ4284EY-T1_GE3 MOSFET 40V 8A 3.9W AEC-Q101 Qualified
SQ4284EY-T1-GE3 MOSFET RECOMMENDED ALT 78-SQ4284EY-T1_GE3
Vishay
Vishay
SQ4284EY-T1_GE3 MOSFET 2N-CH 40V 8A 8SOIC
SQ4282EY-T1_GE3 MOSFET 2 N-CHANNEL 30V 8A 8SOIC
SQ4282EY Neu und Original
SQ4282EY-T1 Neu und Original
SQ4282EY-T1-E3 Neu und Original
SQ4282EY-T1-GE3 Trans MOSFET N-CH 30V 8A Automotive 8-Pin SO T/R
SQ4284EY Neu und Original
SQ4284EY-T1-GE3 DUAL N-CHANNEL 40-V (D-S) 175C
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