 | | | |
| PartNumber | SQD15N06-42L | SQD15N06-42L-GE3 | SQD15N06-42L-T4GE3 |
| Description | N-CHANNEL 60V DPAK | ||
| Manufacturer | - | - | |
| Product Category | - | FETs - Single | - |
| Series | - | SQ Series | - |
| Packaging | - | Reel | - |
| Unit Weight | - | 0.050717 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Tradename | - | TrenchFET | - |
| Package Case | - | TO-252-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 2 W | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 7 ns | - |
| Rise Time | - | 8 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 15 A | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Rds On Drain Source Resistance | - | 42 mOhms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 15 ns | - |
| Typical Turn On Delay Time | - | 7 ns | - |
| Qg Gate Charge | - | 9.5 nC | - |
| Channel Mode | - | Enhancement | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD15N06-42L_GE3 | MOSFET 60V 15A 37W AEC-Q101 Qualified | |
| SQD15N06-42L_GE3-CUT TAPE | Neu und Original | ||
| SQD15N06-42L | Neu und Original | ||
| SQD15N06-42L-GE3 | N-CHANNEL 60V DPAK | ||
| SQD15N06-42L-T4GE3 | Neu und Original | ||
Vishay |
SQD15N06-42L_GE3 | MOSFET N-CH 60V 15A |