 |  | | |
| PartNumber | SQD45P03-12-T4_GE3 | SQD45P03-12 | SQD45P03-12-GE3 |
| Description | MOSFET -30V Vds 20V Vgs TO-252 | Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) TO-252AA T/R | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 10 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | - 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 83 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 71 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 34 S | - | - |
| Fall Time | 19 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 11 ns | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 29 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD45P03-12_GE3 | MOSFET 30V 50A 71W AEC-Q101 Qualified | |
| SQD45P03-12-T4_GE3 | MOSFET -30V Vds 20V Vgs TO-252 | ||
| SQD45P03-12 | Neu und Original | ||
| SQD45P03-12-GE3 | Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) TO-252AA T/R | ||
Vishay |
SQD45P03-12_GE3 | MOSFET P-CH 30V 50A TO252 |