 |  | | |
| PartNumber | SQD50N10-8m9L_GE3 | SQD50N10-8M9L | SQD50N10-8M9L-GE3 |
| Description | MOSFET 100V 50A 45watt AEC-Q101 Qualified | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 50 A | - | - |
| Rds On Drain Source Resistance | 8.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 46 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 67 S | - | - |
| Fall Time | 120 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 95 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Unit Weight | 0.050717 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQD50N10-8m9L_GE3 | MOSFET 100V 50A 45watt AEC-Q101 Qualified | |
| SQD50N10-8M9L | Neu und Original | ||
| SQD50N10-8M9L-GE3 | Neu und Original | ||
Vishay |
SQD50N10-8M9L_GE3 | MOSFET N-CHAN 100V TO252 |