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| PartNumber | SQJ858AEP-T1_GE3 | SQJ858AEP-T1-GE3 | SQJ858AEP |
| Description | MOSFET 40V 58A 48W AEC-Q101 Qualified | MOSFET RECOMMENDED ALT 78-SQJ858AEP-T1_GE3 | |
| Manufacturer | Vishay | Vishay | Vishay Siliconix |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PowerPAK-SO-8L-4 | PowerPAK-SO-8L-4 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 58 A | - | - |
| Rds On Drain Source Resistance | 5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 55 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Pd Power Dissipation | 48 W | - | - |
| Configuration | Single | - | Single |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Series | SQ | SQ | TrenchFETR |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 99 S | - | - |
| Fall Time | 8 ns | - | 8 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | - | 9 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 26 ns | - | 26 ns |
| Typical Turn On Delay Time | 10 ns | - | 10 ns |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Height | - | 1.04 mm | - |
| Length | - | 6.15 mm | - |
| Width | - | 5.13 mm | - |
| Part # Aliases | - | SQJ848AEP-T1-GE3 | - |
| Package Case | - | - | PowerPAKR SO-8 |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PowerPAKR SO-8 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 48W |
| Drain to Source Voltage Vdss | - | - | 40V |
| Input Capacitance Ciss Vds | - | - | 2450pF @ 20V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 58A (Tc) |
| Rds On Max Id Vgs | - | - | 6.3 mOhm @ 14A, 10V |
| Vgs th Max Id | - | - | 2.5V @ 250μA |
| Gate Charge Qg Vgs | - | - | 55nC @ 10V |
| Pd Power Dissipation | - | - | 48 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 58 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Rds On Drain Source Resistance | - | - | 6.3 mOhms |
| Qg Gate Charge | - | - | 36 nC |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQJ858AEP-T1_GE3 | MOSFET 40V 58A 48W AEC-Q101 Qualified | |
| SQJ858AEP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SQJ858AEP-T1_GE3 | ||
| SQJ858AEP-T1-GE3 | N-CHANNEL 40-V (D-S) 175C MOSF | ||
| SQJ858AEP | Neu und Original | ||
| SQJ858AEP-T1-G | Neu und Original | ||
Vishay |
SQJ858AEP-T1_GE3 | MOSFET N-CH 40V 58A |