 |  | | |
| PartNumber | SQM40016EM_GE3 | SQM40010EL_GE3 | SQM40020EL_GE3 |
| Description | MOSFET 40V Vds 20V Vgs D2PAK (TO-263-7L) | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | MOSFET Automotive N-Channel 40 V (D-S) 175C MOSFET |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 250 A | 120 A | 100 A |
| Rds On Drain Source Resistance | 1 mOhms | 1.21 mOhms | 17.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 1.5 V | 1.7 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 163 nC | 230 nC | 108 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 300 W | 375 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 181 S | 174 S | - |
| Fall Time | 35 ns | 14 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 215 ns | 20 ns | 10 ns |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 59 ns | 60 ns | 50 ns |
| Typical Turn On Delay Time | 24 ns | 14 ns | 15 ns |
| Qualification | - | AEC-Q101 | - |
| Series | - | SQ | - |
| Unit Weight | - | 0.077603 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQM40081EL_GE3 | MOSFET 40V Vds 20V Vgs TO-263 | |
| SQM40016EM_GE3 | MOSFET 40V Vds 20V Vgs D2PAK (TO-263-7L) | ||
| SQM40022EM_GE3 | MOSFET 40V Vds 20V Vgs D2PAK (TO-263-7L) | ||
| SQM40061EL_GE3 | MOSFET -40V Vds; +/-20V Vgs TO-263; -100A Id | ||
| SQM40022E_GE3 | MOSFET 40V Vds 20V Vgs D2PAK (TO-263) | ||
| SQM40010EL_GE3 | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | ||
| SQM40P10-40L_GE3 | MOSFET P-Channel 100V AEC-Q101 Qualified | ||
| SQM40N10-30_GE3 | MOSFET 100V 40A 107W AEC-Q101 Qualified | ||
| SQM40031EL_GE3 | MOSFET P Ch -40V Vds AEC-Q101 Qualified | ||
| SQM40N15-38_GE3 | MOSFET 150V 40A 166W AEC-Q101 Qualified | ||
| SQM40020E_GE3 | MOSFET Automotive N-Channel 40 V (D-S) 175C MOSFET | ||
| SQM40020EL_GE3 | MOSFET Automotive N-Channel 40 V (D-S) 175C MOSFET | ||
| SQM40041EL_GE3 | MOSFET Pch -40V Vds 20V Vgs TO-263 | ||
| SQM40N10-30-GE3 | MOSFET RECOMMENDED ALT 781-SQM40N10-30_GE3 | ||
| SQM40P10-40L-GE3 | MOSFET RECOMMENDED ALT 78-SQM40P10-40L_GE3 | ||
| SQM40N15-38-GE3 | RF Bipolar Transistors MOSFET 150V 40A 166W N-Ch Automotive | ||
| SQM40P10-40L-GE3 | RF Bipolar Transistors MOSFET P-Channel 100V Automotive MOSFET | ||
| SQM40N10-30-GE3 | RF Bipolar Transistors MOSFET 100V 40A 107W 30mohm @ 10V | ||
| SQM40010EL-GE3 | Neu und Original | ||
| SQM40022E | Neu und Original | ||
| SQM40N10-30 | Neu und Original | ||
| SQM40N15-38 | Neu und Original | ||
| SQM40N1538GE3 | Power Field-Effect Transistor, 40A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| SQM40P10-40L | Neu und Original | ||
Vishay |
SQM40N15-38_GE3 | MOSFET N-CH 150V 40A TO263 | |
| SQM40N10-30_GE3 | MOSFET N-CH 100V 40A TO263 | ||
| SQM40014EM_GE3 | MOSFET N-CH 40V 200A TO263-7 | ||
| SQM40016EM_GE3 | MOSFET N-CHAN 40V | ||
| SQM40031EL_GE3 | MOSFET P-CH 40V 120A D2PAK |