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| PartNumber | SQP90P06-07L_GE3 | SQP90142E_GE3 | SQP90P06-07L |
| Description | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | MOSFET N-CH 200V 78.5A TO220AB | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 5.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 270 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Tube | - | - |
| Series | SQ | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 90 S | - | - |
| Fall Time | 32 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 23 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 97 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Unit Weight | 0.063493 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SQP90P06-07L_GE3 | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | |
Vishay |
SQP90142E_GE3 | MOSFET N-CH 200V 78.5A TO220AB | |
| SQP90P06-07L | Neu und Original |