SSM3J120TU(T

SSM3J120TU(TE85L) vs SSM3J120TU(T5LAPE vs SSM3J120TU(T5LT)

 
PartNumberSSM3J120TU(TE85L)SSM3J120TU(T5LAPESSM3J120TU(T5LT)
DescriptionMOSFET Vds=-20V Id=-4A 3Pin
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseUFM-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance60 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation800 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.7 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesSSM3J120--
Transistor Type1 P-Channel--
TypeSmall Signal--
Width1.7 mm--
BrandToshiba--
Forward Transconductance Min12.1 S / 6.1 S--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
SSM3J120TU(TE85L) MOSFET Vds=-20V Id=-4A 3Pin
SSM3J120TU(TE85L) IGBT Transistors MOSFET Vds=-20V Id=-4A 3Pin
SSM3J120TU(T5LAPE Neu und Original
SSM3J120TU(T5LT) Neu und Original
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