SSM3K56F

SSM3K56FS,LF vs SSM3K56FS vs SSM3K56FS,LF(T

 
PartNumberSSM3K56FS,LFSSM3K56FSSSM3K56FS,LF(T
DescriptionMOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-416-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance235 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge1 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Height0.7 mm--
Length1.6 mm--
SeriesSSM3K56--
Transistor Type1 N-Channel--
Width0.8 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8.5 ns--
Typical Turn On Delay Time5.5 ns--
Unit Weight0.000212 oz--
Package Case-SC-75, SOT-416-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SSM-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-150mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-55pF @ 10V-
FET Feature-Logic Level Gate, 1.5V Drive-
Current Continuous Drain Id 25°C-800mA (Ta)-
Rds On Max Id Vgs-235 mOhm @ 800mA, 4.5V-
Vgs th Max Id-1V @ 1mA-
Gate Charge Qg Vgs-1nC @ 4.5V-
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
SSM3K56FS,LF MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF
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SSM3K56FS Neu und Original
SSM3K56FS,LF(T Neu und Original
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SSM3K56FSLNKAFT Neu und Original
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