SSM6N17FU(T

SSM6N17FU(TE85L,F) vs SSM6N17FU(T5L,F,T) vs SSM6N17FU(T5LFT)

 
PartNumberSSM6N17FU(TE85L,F)SSM6N17FU(T5L,F,T)SSM6N17FU(T5LFT)
DescriptionMOSFET 2-in-1 MOSFET ID=100mA VDSS=50V
ManufacturerToshibaTOS-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSC-70-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance20 Ohms--
Vgs th Gate Source Threshold Voltage900 mV--
Vgs Gate Source Voltage7 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation200 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height0.9 mm--
Length2 mm--
SeriesSSM6N17FU--
Transistor Type2 N-Channel--
Width1.25 mm--
BrandToshiba--
Forward Transconductance Min20 mS--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
SSM6N17FU(TE85L,F) MOSFET 2-in-1 MOSFET ID=100mA VDSS=50V
SSM6N17FU(T5L,F,T) Neu und Original
SSM6N17FU(T5LFT) Neu und Original
SSM6N17FU(TE85LF) Neu und Original
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