PartNumber | SSM6N56FE,LM | SSM6N55NU,LF | SSM6N57NU,LF |
Description | MOSFET Small-signal MOSFET N-Channel | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | ES6-6 | UDFN-6 | UDFN-6 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 30 V | 30 V |
Id Continuous Drain Current | 800 mA | 4 A | 4 A |
Rds On Drain Source Resistance | 235 mOhms, 235 mOhms | 64 mOhms | 82 mOhms |
Vgs th Gate Source Threshold Voltage | 400 mV | 2.5 V | 1 V |
Vgs Gate Source Voltage | 4.5 V | 20 V | 12 V |
Qg Gate Charge | 1 nC, 1 nC | 2.5 nC | 3.2 nC |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 250 mW | 1 W | 2 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Reel | Reel |
Height | 0.55 mm | 0.75 mm | 0.75 mm |
Length | 1.6 mm | 2 mm | 2 mm |
Series | SSM6N56 | SSM6N55 | SSM6N57 |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Width | 1.2 mm | 2 mm | 2 mm |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 4000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 8.5 ns, 8.5 ns | - | - |
Typical Turn On Delay Time | 5.5 ns, 5.5 ns | - | - |
Unit Weight | 0.000289 oz | - | - |
Minimum Operating Temperature | - | - 55 C | - |