SSM6N7002B

SSM6N7002BFE,LM vs SSM6N7002BFE vs SSM6N7002BFE(T5L

 
PartNumberSSM6N7002BFE,LMSSM6N7002BFESSM6N7002BFE(T5L
DescriptionMOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz
ManufacturerToshibaGP/Toshiba-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseES6-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance2.1 Ohms--
Vgs Gate Source Voltage10 V--
Pd Power Dissipation150 mW--
ConfigurationDual--
PackagingReel--
Height0.55 mm--
Length1.6 mm--
SeriesSSM6N7002--
Transistor Type2 N-Channel--
Width1.2 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
SSM6N7002BFE,LM MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz
SSM6N7002BFU,LF IGBT Transistors MOSFET 60V VDSS 20V VGSS 200mA ID 150mW
SSM6N7002BFE,LM MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz
SSM6N7002BFU,LF(T MOSFET N-Ch Sm Sig FET 0.2A 60V 2-in-1
SSM6N7002BFE Neu und Original
SSM6N7002BFE,LM(B Neu und Original
SSM6N7002BFE,LM(T Neu und Original
SSM6N7002BFU Neu und Original
SSM6N7002BFU LT Neu und Original
SSM6N7002BFU(LT,FT Neu und Original
SSM6N7002BFU(LT,FT) Neu und Original
SSM6N7002BFU(LTFT Neu und Original
SSM6N7002BFU(T5L,F Neu und Original
SSM6N7002BFU,LFCT Neu und Original
SSM6N7002BFU- Neu und Original
SSM6N7002BFU-NM Neu und Original
SSM6N7002BFULF Neu und Original
SSM6N7002BFULF(T Neu und Original
SSM6N7002BFE(T5L Neu und Original
SSM6N7002BFULFCT Neu und Original
Top