PartNumber | SSM6N7002BFE,LM | SSM6N7002BFE | SSM6N7002BFE(T5L |
Description | MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz | ||
Manufacturer | Toshiba | GP/Toshiba | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | ES6-6 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 200 mA | - | - |
Rds On Drain Source Resistance | 2.1 Ohms | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Pd Power Dissipation | 150 mW | - | - |
Configuration | Dual | - | - |
Packaging | Reel | - | - |
Height | 0.55 mm | - | - |
Length | 1.6 mm | - | - |
Series | SSM6N7002 | - | - |
Transistor Type | 2 N-Channel | - | - |
Width | 1.2 mm | - | - |
Brand | Toshiba | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | MOSFETs | - | - |