 | |  | |
| PartNumber | STB18N60DM2 | STB18N60M2 | STB18N55M5 |
| Description | MOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package | MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 | MOSFET N-CH 550V 13A D2PAK |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 12 A | 13 A | - |
| Rds On Drain Source Resistance | 260 mOhms | 255 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Vgs Gate Source Voltage | 25 V | 25 V | - |
| Qg Gate Charge | 20 nC | 21.5 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 90 W | 110 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | MDmesh | - | - |
| Packaging | Reel | Reel | Reel |
| Series | STB18N60DM2 | STB18N60M2 | MDmesh M5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Forward Transconductance Min | - | - | - |
| Fall Time | 32.5 ns | 10.6 ns | 13 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 8 ns | 9 ns | 9.5 ns |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 9.5 ns | 47 ns | - |
| Typical Turn On Delay Time | 13.5 ns | 12 ns | - |
| Unit Weight | 0.079014 oz | 0.139332 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 90 W |
| Vgs Gate Source Voltage | - | - | 25 V |
| Id Continuous Drain Current | - | - | 13 A |
| Vds Drain Source Breakdown Voltage | - | - | 550 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 180 mOhms |
| Qg Gate Charge | - | - | 31 nC |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
STMicroelectronics |
STB18N60M6 | MOSFET N-channel 600 V, 105 mOhm typ., 22 A MDmesh M6 Power MOSFET in a D2PAK package | |
| STB18N60DM2 | MOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK package | ||
| STB18NF25 | MOSFET N-Ch 250 V .14 ohm 17A STripFET II | ||
| STB18NM60ND | MOSFET N-CH 600V 0.25Ohm 13A FDmesh II | ||
| STB18N65M5 | MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh M5 | ||
| STB18N60M2 | MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 | ||
| STB18NM80 | MOSFET N-channel 800 V MDMesh | ||
| STB18NF30 | MOSFET N-Ch 330V 18A MOS STripFET II D2PAK | ||
| STB18NM60N | MOSFET N-channel 600 V 0.27 ohm 13 A MDmesh | ||
| STB18N55M5 | MOSFET N-CH 550V 13A D2PAK | ||
| STB18NM60ND | MOSFET N-CH 600V 13A D2PAK | ||
| STB18N60DM2 | MOSFET N-CH 600V 12A | ||
| STB18N60M2 | MOSFET N-CH 600V D2PAK | ||
| STB18N65M5 | MOSFET N-CH 650V 15A D2PAK | ||
| STB18NF25 | MOSFET N-CH 250V 17A D2PAK | ||
| STB18NF30 | MOSFET N-CH 330V 18A D2PAK | ||
| STB18NM60N | MOSFET N-CH 600V 13A D2PAK | ||
| STB18NM80 | MOSFET N-CH 800V 17A D2PAK | ||
| STB18N60DM2-CUT TAPE | Neu und Original | ||
| STB18N65M5-CUT TAPE | Neu und Original | ||
| STB18NF25-CUT TAPE | Neu und Original | ||
| STB18N60M6 | N-CHANNEL 600 V, 105 MOHM TYP., | ||
| STB18N65M5 18N65M5 | Neu und Original | ||
| STB18N20 | Neu und Original |