STB200NF04

STB200NF04L-1 vs STB200NF04L vs STB200NF04-1

 
PartNumberSTB200NF04L-1STB200NF04LSTB200NF04-1
DescriptionMOSFET N Ch 40V 3mOhm 120AMOSFET N Ch 40V 3mOhm 120AMOSFET N-CH 40V 120A I2PAK
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleSMD/SMT-
Package / CaseTO-262-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current120 A120 A-
Rds On Drain Source Resistance4.6 mOhms3.5 mOhms-
Vgs Gate Source Voltage16 V16 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation300 W300 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeReel-
Height8.95 mm4.6 mm-
Length10 mm10.4 mm-
SeriesSTB200NF04LSTB200NF04L-
Transistor Type1 N-Channel1 N-Channel-
Width4.4 mm9.35 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time80 ns80 ns-
Product TypeMOSFETMOSFET-
Rise Time270 ns270 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time90 ns90 ns-
Typical Turn On Delay Time37 ns37 ns-
Unit Weight0.050717 oz0.139332 oz-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STB200NF04T4 MOSFET N-Ch 40 Volt 120 Amp
STB200NF04L-1 MOSFET N Ch 40V 3mOhm 120A
STB200NF04L MOSFET N Ch 40V 3mOhm 120A
STB200NF04T4 Darlington Transistors MOSFET N-Ch 40 Volt 120 Amp
STB200NF04-1 MOSFET N-CH 40V 120A I2PAK
STB200NF04L MOSFET N-CH 40V 120A D2PAK
STB200NF04 Neu und Original
STB200NF04LT4 Neu und Original
STB200NF04T4/BKN Neu und Original
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