STB20N6

STB20N65M5 vs STB20N60M2-EP

 
PartNumberSTB20N65M5STB20N60M2-EP
DescriptionMOSFET N-Ch 650V 18A MDmesh M5 0.19OhmMOSFET N-channel 600 V, 0.24 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a D2PAK package
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseTO-263-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage650 V-
Id Continuous Drain Current18 A-
Rds On Drain Source Resistance190 mOhms-
Vgs th Gate Source Threshold Voltage4 V-
Vgs Gate Source Voltage25 V-
Qg Gate Charge36 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation130 W-
ConfigurationSingle-
TradenameMDmeshMDmesh
PackagingReel-
SeriesSTB20N65M5STB20N60M2-EP
Transistor Type1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics
Fall Time7.5 ns-
Product TypeMOSFETMOSFET
Rise Time7.5 ns-
Factory Pack Quantity10001000
SubcategoryMOSFETsMOSFETs
Unit Weight0.139332 oz-
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STB20N65M5 MOSFET N-Ch 650V 18A MDmesh M5 0.19Ohm
STB20N60M2-EP MOSFET N-channel 600 V, 0.24 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a D2PAK package
STB20N60M2-EP MOSFET N-CH 600V 13A D2PAK
STB20N65M5 MOSFET N-CH 650V 18A D2PAK
STB20N65M5-CUT TAPE Neu und Original
STB20N65M5 20N65M5 Neu und Original
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