STB23NM

STB23NM50N vs STB23NM60ND vs STB23NM60N

 
PartNumberSTB23NM50NSTB23NM60NDSTB23NM60N
DescriptionMOSFET MDmesh II N-Ch 500V 17A ID <0.19 RDS(on)MOSFET N-CH 600V 0.150 Ohm 19.5A FDmesh II MOSMOSFET N-Channel 600V Power MDmesh
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3D2PAK-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V600 V600 V
Id Continuous Drain Current17 A19.5 A19 A
Rds On Drain Source Resistance162 mOhms180 mOhms180 mOhms
Vgs Gate Source Voltage25 V10 V25 V
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation125 W150 W150 W
ConfigurationSingleSingleSingle
TradenameMDmesh--
PackagingReelReelReel
SeriesSTB23NM50NSTB23NM60NDSTB23NM60N
Transistor Type1 N-Channel1 N-Channel Power MOSFET1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Vgs th Gate Source Threshold Voltage-3 V-
Qg Gate Charge-69 nC-
Channel Mode-EnhancementEnhancement
Height-4.6 mm4.6 mm
Length-10.4 mm10.4 mm
Width-9.35 mm9.35 mm
Fall Time-42 ns36 ns
Rise Time-19 ns15 ns
Typical Turn Off Delay Time-92 ns90 ns
Typical Turn On Delay Time-21 ns25 ns
Hersteller Teil # Beschreibung RFQ
STMicroelectronics
STMicroelectronics
STB23NM50N MOSFET MDmesh II N-Ch 500V 17A ID <0.19 RDS(on)
STB23NM60ND MOSFET N-CH 600V 0.150 Ohm 19.5A FDmesh II MOS
STB23NM60N MOSFET N-Channel 600V Power MDmesh
STB23NM50N Darlington Transistors MOSFET MDmesh II N-Ch 500V 17A ID
STB23NM60N MOSFET N-CH 600V 19A D2PAK
STB23NM60ND MOSFET N-CH 600V 19.5A D2PAK
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