PartNumber | STB23NM50N | STB23NM60ND | STB23NM60N |
Description | MOSFET MDmesh II N-Ch 500V 17A ID <0.19 RDS(on) | MOSFET N-CH 600V 0.150 Ohm 19.5A FDmesh II MOS | MOSFET N-Channel 600V Power MDmesh |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | D2PAK-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 500 V | 600 V | 600 V |
Id Continuous Drain Current | 17 A | 19.5 A | 19 A |
Rds On Drain Source Resistance | 162 mOhms | 180 mOhms | 180 mOhms |
Vgs Gate Source Voltage | 25 V | 10 V | 25 V |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 125 W | 150 W | 150 W |
Configuration | Single | Single | Single |
Tradename | MDmesh | - | - |
Packaging | Reel | Reel | Reel |
Series | STB23NM50N | STB23NM60ND | STB23NM60N |
Transistor Type | 1 N-Channel | 1 N-Channel Power MOSFET | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Qg Gate Charge | - | 69 nC | - |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 4.6 mm | 4.6 mm |
Length | - | 10.4 mm | 10.4 mm |
Width | - | 9.35 mm | 9.35 mm |
Fall Time | - | 42 ns | 36 ns |
Rise Time | - | 19 ns | 15 ns |
Typical Turn Off Delay Time | - | 92 ns | 90 ns |
Typical Turn On Delay Time | - | 21 ns | 25 ns |